2021 9th International Symposium on Next Generation Electronics
2021 9th International Symposium on Next Generation Electronics
2021 9th International Symposium on Next Generation Electronics

In alphabetical order

Ibrahim M. Abdel-Motaleb

Professor of Electrical Engineering

Director of the Microelectronics Laboratory

Northern Illinois University

TITLE: Design and Optimization of Bow-Tie Terahertz Micro-antennas

ABSTRACT: Terahertz spectrum occupies the gap between microwave and infrared, with a frequency range between 0.3-3 THz. This range is also called submillimeter microwave range, since it has wavelengths from 1mm - 0.1 mm. This terahertz range, not only has a wide bandwidth, but also is a non-ionizing radiation. Therefore, it can be safely used in medical applications, short distance communications, indoor wireless communications, security systems, imaging, space exploration, and many other applications.

These applications require the development of terahertz antennas or detectors.  One of the most promising terahertz antennas/detectors is the bow-tie antenna. This antenna is mainly two adjacent metallic triangles, with a nano-gap between their vertices, deposited on a dielectric substrate. The gain/performance of the bow-tie antenna depends on its geometrical dimensions and the properties of the materials used. The multi-physics program, ComsolTM, is used to design and analyze the antenna. The study will show the impact of the geometry and the material properties on the performance of the device. From these results, one can determine the design parameters for optimizing the antenna’s performance.

Jue-Xian Cao (曹觉先)


Xiangtan University

TITLE: Research on the Key Technology for Carbon-based Field Effect Transistor Sensor array (碳基场效应晶体管传感器阵列技术研究)

Xiang-Bai Chen (陈相柏)


Wuhan Institute of Technology

TITLE: Anomalous behaviors of spin waves (自旋波的反常特性)

ABSTRACT: Spin waves are intriguing to the development of next generation spintronic devices, which can operate at much shorter wavelength than conventional optical devices and are compatible with conventional electronic devices. Current understanding of spin waves is quite limited yet. In this talk, we present a systematic discussion of anomalous behaviors of spin waves observed by inelastic light scattering experiments. The large asymmetry of anti-Stokes to Stokes intensity ratio, broad linewidth, strong resonance effect, unique polarization selection, and abnormal impurity dependence of spin waves are discussed. In addition, a proposed model for the mechanisms of spin flip, spin relaxing, and spin wave scattering is presented for understanding these anomalous behaviors of spin waves. Furthermore, time resolved experiments are suggested to approve the proposed model by investigating the temporal profile differences of phonon and spin wave scattering.

Lian-Wen Deng (邓联文)


Central South University

TITLE: Synthesis of Copper Nanomaterials and Sensing Application Design (铜纳米材料合成及传感应用设计)

Shu-Rong Dong (董树荣)


Zhejiang University

TITLE: Stretchable Electronics for clinical application  

ABSTRACT: Stretchable electronics-based devices are expected to play a big role in clinical diagnosis. However, the stability and quality of the signals collected by existing stretchable electronics are too poor to meet the demand of high standard clinical diagnosis. Here, design method for stretchable electronics and some novel clinical applications are proposed. This proof of concept research holds the promise for the development of new diagnostic strategies for the potential for clinical application and general implication.

Yu-Feng Guo (郭宇锋)


Nanjing University of Posts and Telecommunications, China

TITLE: The Application of the High-k Dielectrics in Lateral Double-Diffused Metal Oxide Semiconductor

Gen-Quan Han (韩根全)


Xidian University, China
TITLE: New Device Technology in the Post-Moore Era

Jin He (何进)

Professor of Peking University

Professor and director of Shenzhen System-on-Chip Key Laboratory of Peking University Shenzhen Institute

TITLE: Recent progress on the Graphene-based Device and Circuit SPICE modeling

ABSTRACT: It is more important to find the new materials and new structures for the nano-scale semiconductor device application because the traditional silicon based CMOS circuits and technology process are fast approaching its physics limit with the More law advancement.  The Graphene based device and integrated circuits show its possible potential to continue the More law scaling due to its excellent performance and compatible with CMOS process technology while the traditional IC is meeting more and more the difficulties and bottlenecks. Therefore, it is important to understand the Graphene based device physics and establish circuit SPICE modeling for these advancements can be used to continue IC development and the information industry progress.

On one hand, it is one challenge how to make the Graphene macro compact model to include the micro transport based on the quantum mechanism and conduction. On the other hand, the present most EDA tools can only work well in the MHz field, but the Graphene devices and IC may work at the more high operation frequency such as GHz and even more THz with device scaling and application requirement.  It is necessary to develop physics based models to correctly describe the Graphene device and circuit high frequency behaviors.

The target of the Graphene study in our group is to develop the own compact SPICE models for the Graphene device and IC simulation application through exploring the Graphene device physics. In this talk, we will review how to build the Graphene SPICE-RF and SPICE-THZ models, and demonstrate the developed model functions for the Graphene device and circuit performance simulation.  All these works will provide a basement for the Graphene chip design and optimization, and further the Graphene IC industry advancement and development.

Qing-Hui Hong (洪庆辉)

Assistant Professor

Hunan University

TITLE: 类脑智能计算电路设计及其应用

Hong-Wei Hu (胡宏伟)


Changsha University of Science and Technology

TITLE: Ultrasonic Phased Array Sparse-TFM Imaging

ABSTRACT: The ultrasonic phased array total focusing method (TFM) has the advantages of full-range dynamic focusing and high imaging resolution, but the problem of long imaging time limits its practically industrial applications. A corrected sparse-TFM imaging method is introduced as a viable solution to the trade-off between the imaging precision and computational efficiency. To reduce the imaging calculation demand of TFM, the locations of active array elements in the sparse array are optimized by combining almost different sets with the genetic algorithm (ADSGA), and corrected based on the consistency of the effective aperture with the equivalent point diffusion function. At the same time, to further increase the imaging efficiency, a sparse-TFM image with lower resolution is obtained by reducing the number of focus points and then interpolated by the new edge-directed interpolation algorithm (NEDI) to obtain a high quality sparse-TFM image. Results indicate that the proposed sparse-TFM can greatly increase the computational efficiency while maintaining a relatively low error.

Cheng-Jun Huang (黄成军)

Professor, Institute of Microelectronics, Chinese Academy of Sciences

TITLE: The Marriage of Micro/nano Electronics and Life Science

ABSTRACT: The interdisciplinary innovations of micro/nano electronics and life science has brought a new direction in the “More Than Moore” field, enabling precision medicine, healthcare and medical research. In this presentation, our latest microelectronics/microfluidics integrated biosensor, actuator platforms for the manipulation, sorting, and detection of rare bio-particles, e.g., circulating tumor cells (CTC), exosomes from human body-fluids, and small molecules from the breath. In one example, a so called “One cell, triple E” platform was developed, which allows users to Enrich, Electrical detect, and Electroporate the tumor cells at single cell resolution. The future vision in this field will also be discussed.

Xiao-Zong Huang (黄晓宗)

Chongqing Acoustic-optic-electronic Co. Ltd, CETC

TITLE: ESD Optimization Techniques and Methods for an Analog Amplifier

ABSTRACT: Amplifier is one kind of the most widely used analog circuits for signal processing. The ESD protections of the amplifier are essential for reliability and performance, especially for the circuits with specific requirements. In this work, the ESD capability of the amplifier can be optimized from under 500V to over 2000V with a series of the different protection strategies and device combination options. Every step of the process should deal with the trade-off between the performance of core circuit and ESD protection capability. All the optimization methods were analyzed with operating principles and verified with experiment results. The optimization techniques and methods are meaningful for the design of high performance analog circuits.

Zhi-Ping Huang (黄芝平)


National University of Defense Technology


Mou-Fu Kong (孔谋夫)

Associate Professor

University of Electronic Science and Technology of China

TITLE: SiC Trench MOSFET Merged Schottky Barrier Diode for Enhanced Reverse Recovery Performance

ABSTRACT: As a wide-bandgap semiconductor material, silicon carbide (SiC) is beginning to be widely used in high voltage power devices because of its superior electrical properties. Among SiC-based power devices, the SiC MOSFET is a popularly studied device due to its low drive power consumption, fast switching speed and low conduction loss. However, as for the conventional MOSFET, the high on-state voltage drop and bipolar degradation effect of the body PN junction diode results in a poor reverse recovery performance. And SiC MOSFETs with integrated Schottky diodes have obvious advantages over the conventional SiC MOSFETs, which do not require off-chip anti-parallel fast recovery diodes in applications. In this paper, two new SiC trench MOSFETs are proposed, both of which integrate a Schottky barrier diode to enhance the reverse recovery performance. In addition, the proposed super-junction trench MOSFET not only improves the reverse recovery performance, but also achieves an ultra-low specific on-resistance compared to the conventional SiC trench MOSFET.

Fu-Shan Li (李福山)


Fuzhou Unniversity

TITLE: Intelligent Optoelectronic Devices based on Luminescent Quantum Dots

ABSTRACT: Luminescent quantum dot materials have received increasing attention due to their unique advantages, such as narrow band width, high luminescence efficiency, and solution-processability. In this talk, I would like to present our recent works about the controllable and random quantum dot transport during solution processes, and their potential applications in intelligent optoelectronic devices.

Qing-Jiang Li (李清江)

Associate Professor

National University of Defense Technology

TITLE: 忆阻器类脑计算芯片

Xiu-Han Li (李修函)


Beijing Jiaotong University

TITLE: 3D MEMS metamaterial modulators for THz Communication

ABSTRACT: In view of building a terahertz wave communication system based on metamaterials, various metamaterial-based tunable filters and modulators have been proposed in our research group. Compared with traditional devices, filters and modulators made of metamaterial show great advantages of low loss, ultra-thin thickness, low cost, and conformal properties.

 This talk will introduce our research activities to respond these challenges by integrating new materials and structure designs of metamaterials. We managed to integrate the metamaterial unit cell array on a paralyne substrate to fabricate a flexible metamaterial filter. A tunable filter based on the thermal actuated micro beam was also presented to introduce MEMS technology into the design of metamaterial filters. Also, the integration of graphene and metamaterial is one of our research focuses. In our previous works, the EM response of the graphene-metamaterial hybrid structure can be effectively modulated by adjusting the chemical potential of graphene via bias voltage, which is of high value in the design of metamaterial modulators and tunable filters. More, based on the polarization conversion and the Pancharatnam–Berry (PB) phase, a hybrid metasurface that consists of graphene and metal patches (MGMPs) is presented to achieves the radar cross section (RCS) reduction in a wide frequency and incident angle range and a polarization conversion ratio (PCR) of higher than 90%.

Lei Liao (廖蕾)


Hunan University

TITLE: The Transistors based on Two dimensional materials 

Kang Liu (刘康)

Associate Professor

signal processing

National University of Defense Technology

TITLE: Vortex electromagnetic wave and its applications in radar realms(涡旋电磁波及其在雷达领域应用)

ABSTRACT: Academia has agreed that the vortex electromagnetic (EM) wave carrying orbital angular momentum (OAM) provides a dynamic freedom that can enhance radar techniques. Specifically, OAM has the potential to improve the performance of conventional target-detection and imaging systems. This talk offers an overview of OAM-based radar, including characteristics of the OAM-carrying field, principles of EM vortex imaging and rotational Doppler detection, and advantages over conventional systems. Several open questions that offer promising ideas to inspire more research in this emerging area are also included.

Zheng-Chun Liu (刘正春)


Central South University

TITLE: Automatic in situ Synthesis System for Polypeptide Biochip Based on Microfluidic Mixer

ABSTRACT: Nucleic acid analysis is one of the most important techniques for clinical diagnose. Biochips have become a sophisticated analytical device in the fields of biochemical sensing and nucleic acid analysis. However, the cumbersome preparation process and the high production cost limit the versatility of its application. Herein, we have developed an automated synthesis system for in situ preparation of biochip with peptide backbone based on the microfluidic mixer and micro reaction chamber. The microfluidic mixer was used as a key component to perform the real-time activation of the carboxylic groups, leading to an instant coupling reaction of monomers with high efficiency. The repeating synthesis procedure was realized without too much manual intervention with the help of flow control system based on programmable logical controller and LabVIEW. The real-time monitoring of synthesis process was realized using a low-cost solar cell coupled with simple ultraviolet absorption device. The photodeprotection experiment revealed that an exposure time of 4 min with 20 mW/cm2 ultraviolet (UV) light at 365nm was sufficient for the complete removal of 2-(2-nitrophenyl) propyloxycarbonyl (NPPOC) groups from the synthetic sites in N, N-dimethylformamide (DMF). The practical capability performance of this synthesis system was further demonstrated by the synthesis of four cycles of aminocaproic acid, and the stepwise yield of coupling was measured to be about 96%, which was comparable with the result from literature, and indicated that this system may provide a new alternative for low-cost in situ synthesis of biochip.

Ji-Wu Lu (卢继武)


Hunan University

TITLE: 基于氧化镓的功率半导体器件研究探索

Yi Luo (罗毅)


Tsinghua University

TITLE: High speed optoelectronic devices for fiber communications (光纤通信高速光电子器件)

An-Lian Pan (潘安练)


Hunan University


Kin Leong Pey

Singapore University of Technology and Design

TITLE: Characterization of Nanoelectronic Devices & Circuits by Advanced Physical, Electrical and Optical Analysis Techniques
The invited talk will focus on some new development of nanoelectronics including CMOS scaling and FINFET technology, emerging non-volatile memory technologies like RRAM and STT-MRAM and 2D materials and its applications, and how advanced physical and electrical analysis techniques, such as in-situ transmission electron microscopy (TEM), conductive atomic force microscopy (CAFM) techniques and state-of-the-art electrooptical probing technique, can be used for in-depth study and characterization of such nanoscale semiconductor devices and circuits. New insights of some of the mechanisms responsible for the fundamental device reliability and lifetime projection will be discussed. New opportunities in using such advanced physical and electrical (and possibly combination with optical) techniques in fault isolation in sub-10nm circuits will be shared.

Shi-Qiao Qin (秦石乔)


National University of Defense Technology
TITLE: Graphene Luminescence by Hot Electron

Li-Tao Sun (孙立涛)


Southeast University

Ke-Hui Sun (孙克辉)

Professor & Dean

School of Physics and Electronics,

Central South University

TITLE: Modeling of discrete memristor and its applications in chaotic systems

ABSTRACT: Researches about memristor have aroused increasing interests in the last several years, but there are few reports on design of the discrete memristor. Based on the integer-order mathematical models, the discrete memristors are proposed. The discrete memristor is designed, where the amount of charge is determined by an integer-order discrete system. In the numerical simulations, it shows that the pinched hysteresis loops are observed. It also implies that the proposed memristor satisfies the definition of a memristor. As the applications, the discrete memristor are introduced to the discrete chaotic maps, and two discrete memristive chaotic maps are designed and analyzed, including the discrete memristor-based Hénon map, and a higher dimensional chaotic map based on the discrete memristor. Their dynamical behaviors are analyzed by the means of attractor phase diagram, bifurcation diagram, Lyapunov exponent spectrum, and spectral entropy complexity algorithm. Numerical simulations show that the discrete memristor can not only enlarge the hyperchaotic region of the original system, but also enhance the system complexity. Finally, the digital signal processor (DSP) implementation verifies the correctness of the solution algorithm and the physical feasibility of the system. Therefore, the discrete memristor has good application prospects in many fields. This talk also commemorates the 50th anniversary of the proposal of memristor by Prof. Chua L.

Teruo Suzuk

Ph.D., Manager,

Advanced Device Development Division, Socionext Inc.

TITLE: Consideration of CDM Measurement for Bare Dies and Wafers

ABSTRACT: ESD failure problems in back-end processing are resolvable, but measuring CDM robustness in the bare-die/wafer state would provide early information about whether the problem lies with ESD protection circuits or electrostatic control. Our new ANSI/ESDA/JEDEC JS-002 compliant Wafer CDM tester correlates with vf-TLP & allows bare die/wafer measurement, to achieve the acceptable accuracy. 

Xiao-Yong Tang (唐小勇)


Changsha University of Science and Technology

TITLE: 中国国家网格作业调度系统

ABSTRACT: 中国国家网格是聚合了高性能计算和事务处理能力的新一代信息基础设施试验床。该网格通过资源共享、协同工作和服务机制,能有效支持科学研究、资源环境、先进制造和信息服务等应用。然而其硬件资源具有异构性、广域性、大规模性和动态性,软件环境及服务机制具有多样性,使中国国家网格应用表现非均衡性和低效性。针对此问题,我们研发基于应用的多域资源优化作业调度系统,有效提高了系统性能

Jun Wang (王俊)


Hunan University
TITLE: 低成本高性能碳化硅功率器件技术的发展趋势和应对方法

Chua-Chin Wang


Department of Electrical Engineering, National Sun Yat-Sen University

TITLE: A 12-bit 100-Msps DAC with 75.3 dB SFDR Using Randomized Biasing Current Source Selection for Real-time FOG Systems

ABSTRACT: In this investigation, a randomized current source selection approach to reduce the current mismatch for a 12-bit current steering DAC (digital to analog converter) particularly designed for

the applications in FOG (fiber optic gyroscope) systems is demonstrated with TSMC 40 nm CMOS technology.  The proposed randomized selection and mismatch reduction approach takes advantage of a near wide-bandwidth white noise generator to generate an unpredictable seed for digital PRNG (pseudo-random number generator) such that the correlation of the selected current sources between adjacent conversions is drastically reduced.  Not only is the mismatch of current sources reduced, the dynamic performance, namely SFDR (spur-free dynamic range), is improved.  Besides, RTZ (return to zero) is carried out by individual single logic gates to reduce the delay as well as the chip area.  Based on post-layout simulations, the conversion rate is over 100 Mbps, 32.81 mW  at 0.9 V supply voltage.  INL and DNL are 1.940 and 0.080, respectively.  Most important of all, SFDR is found to be 75.30 dBc at fin=10MHz, which is 1/10 of the system clock rate, to attain over 11 bits of ENOB (effective number of bits). 

Fu-Liang Wang (王福亮)


Central South University

TITLE: TSV Filling Technology for 3D Microelectronics Packaging (微电子三维封装TSV镀铜填充技术)

Lian-Cheng Wang (汪炼成)


Central South University
TITLE: Polarized and Unidirectional Emission from Micro-LED for 3D Display (3D显示用圆偏振和指向发光氮化镓基Micro LED器件初步研究)

Ming-Xiang Wang (王明湘)


Soochow University

TITLE: Statistical Analysis of Degradation and Failure of Flexible LTPS TFTs under Dynamic Mechanical Stress

ABSTRACT: For flexible low-temperature poly-Si (LTPS) thin-film transistors (TFTs), statistical analysis of their degradation under dynamic bending stress and failure under dynamic stretch stress are investigated. Under dynamic bending stress, statistic shows that on-state current (ION) degradation follows the Gamma distribution. From dependence of Gamma distribution parameters on bending cycles, TFTs operation lifetime can be evaluated. Under dynamic stretch stress, three failure modes of TFTs are identified: GI damage, channel traps generation, and microcracks in the source/drain (S/D) metal wires. Failure statistic shows that the first mode follows the exponential distribution, and the other two modes follow the limited failure population (LFP) model, from which TFTs operation lifetime can be estimated.

Mu-Chun Wang

Prof. & Dr.

Department of Electronic Engineering, Minghsin University of Science and Technology

TITLE: Evolution and Challenge of Advanced Field-Effect Transistors

ABSTRACT: The integrated circuits (ICs) recently achieve the tremendous breakthrough and deeply influence the human lives, including the high-performance computing products, 5G, AR, VR, electrical vehicles, networks, cloud technology, AI, quantum calculation, etc. In ISSCC 2021, Dr. Mark Liu addressed the 3nm-node pilot-run manufacturing at TSMC would be implemented in the end of this year and formally executed the mass production in 2022. In May 2021, IBM beat everyone to the punch with their latest 2nm-node experimental wafers, which the ICs could be reduced in the power consumption about 75% and increased in the electrical performance of 45%, compared with the recent 7nm-node process technology. This kind of process evolution is based on the improved performance of field-effect transistors (FETs). One of the key factors in data calculation or analysis is the operated frequency in ICs increased, which is strongly related to the drive current of these devices. Thus, in process view, the channel length of FETs must be shortened with lithography and etching technology, the 3D FinFETs or multi-bridge-channel FETs are proposed, the channel material with SiGe, Ge, or high-mobility material is necessarily updated, and the high-k dielectric deposition as gate dielectric or capacitor with ALD technology is adopted in the deep nano-node process era. Of course, the high-density transistors in ICs generally causing the heat dissipation, reliability, and cost increment, etc. are the main tasks. Ultimately, besides the concept of system-on-a-chip, with advanced 3D package technology containing InFO or CoWoS package is also a good solution to overcome the process constraint, but the 3D system ICs still face the similarly awkward challenges, mentioned with the previous.

Xiaoqing Wen

Professor and Chair

Department of Creative Informatics

Kyushu Institute of Technology

TITLE: Power-Aware Testing for Low-Power VLSI Circuits

ABSTRACT: Low-power VLSI circuits are indispensable for almost all types of modern electronic devices, from battery-driven mobile gadgets to harvested-energy-driven IoT systems. However, the testing of such low-power VLSI circuits has become a big challenge, especially due to the excessive power dissipation during scan testing. This paper will highlight three major test-power-induced problems (namely heat, false timing failures, clock stretch) and describe how to mitigate them with power-aware VLSI testing. Future research topics in this field will also be discussed.

Wen-Wu Xiao (肖文武)

Xi’an UniIC Semiconductors Co. Ltd, China
TITLE: BEOL- integrated Hf0.5Zr0.5O2 based ferroelectric capacitors for 32Mbit FeRAM with 0.35um CMOS for emedded memory applications

Jun Xu (许军)


Tsinghua University
TITLE: 超陡亚阈斜率MOS晶体管的研究进展

Kai-Da Xu (徐开达)


Xi’an Jiaotong University
TITLE: Millimeter-Wave On-Chip Bandpass Filters with High Performance  (高性能毫米波片上带通滤波器)

Jun-Liang Yang (阳军亮)


School of Physics and Electronics

Central South University

TITLE: Wearable and Printable Sensors for Human Healthcare Monitoring

ABSTRACT: Wearable sensors exhibit outstanding advantages in terms of sensitivity and stability by detecting the dynamics changes in physical signals for human healthcare monitoring. The fabrication of wearable sensors can be integrated into wearable formats such as textile, patches, and wristbands to provide continuous and real-time physiological monitoring via measurements of body motion, skin temperature, heat rate, pulse, and electroencephalography (ECG).

    Here, we proposed two kinds of sensors for wearable healthcare monitoring. Firstly, we developed a highly stretchable and printable polymer composite by adding small amount of silver nanowires in stretchable conductive polymer materials, which shows excellent stretchability up to 500%. The stretchable strain sensor based on the polymer/AgNWs composite can respond to strain signals in real time, even for 1% strain response, and shows excellent stability over 1000 loading/unloading cycles. Moreover, the strain sensor can be attached to human skin and clothed to monitor joints, throat and pulse of the human body. The human body ECG signal was detected successfully with the polymer/AgNWs electrode, which is comparable to the signal obtained by the commercial electrode. Secondly, we developed a wearable electrode for ECG monitoring by screen printing graphene ink on textile. The graphene textile electrode was successfully used to record ECG signals, which showed comparable performance with conventional pre-gelled Ag/AgCl electrode. In addition, the ECG signals obtained from the graphene textile electrodes show good stability after multiple washing cycles and 2000 bending cycles. These effectively achieves on monitoring of human movement and health are expected to be practical in wearable sensors and electronic skin.

Kiat Seng YEO

Associate Provost for Research and International Relations at Singapore University of Technology and Design (SUTD)

TITLE: Ku-Band Bidirectional Mixer with Directional Control

ABSTRACT: This paper presents a novel Ku-band bidirectional mixer with directional control, implemented in 0.18 μm SiGe BiCMOS process. The proposed design is based on ring mixer core with resistive feedback buffer amplifier at the intermediate frequency (IF) port, directional control is enabled through the transmission gate together with the PMOS switch. With 8 dBm local oscillator (LO) power, the designed mixer has achieved a low simulated conversion loss of 2.5 dB and 4.2 dB for down-conversion and up-conversion respectively, with isolation greater than 25 dB.

Hua Yu (余华)


Dean of EST department

Chongqing University

TITLE: Regulating the High-Voltage and High-Impedance Characteristics of Triboelectric Nanogenerator toward Practical Self-powered Sensors

ABSTRACT: In recent years, triboelectric nanogenerator (TENG), as a sensor with promising future, is expected to be widely used in many fields. However, the output of TENG has the characteristics of high voltage (>10-100 V) and high impedance (in MΩ – GΩ), which hinder the TENG’s applications in sensor with considering the operation voltage of conventional electronic components. In this work, two front-end voltage signal processing method and circuit schemes are proposed, which can convert the high-impedance and high-voltage signal output from TENG into a low-voltage and low-impedance signal. These two front-end voltage signal processing circuit solutions have the advantages of structure simplicities and cost-efficiency, and they can be used in combination with common electronic systems. The method can help with various practical TENG-based sensor applications and also provides an economical and simple solution for TENG voltage measurement.

Bo Zhang (张波)


University of Electronic Science and Technology

TITLE: 功率超结器件

Chun-Xi Zhang (张春熹)


Beihang University

Wei-Bing Zhang (张卫兵)


Changsha University of Science and Technology

TITLE: Underlying Magnetic Mechanisms and Quantum Manipulation of layered Ferromagnetic Chromium Trihalides

Wen-Hui Zhu (朱文辉)


Central South University

TITLE: 后摩尔时代颠覆性技术与先进封装

Xue-Cheng Zou (邹雪城)


Huazhong University of Science and Technology

TITLE: Emerging Memory-based Computing: Architecture and Technology

TITLE2: The Dilemma of Moore’s Law:Tackle the Industrial Chain via Value Chain



  • 00


  • 00


  • 00


  • 00


Important Dates

Paper submission:  2021/4/11


Author notification:  2021/5/11

Final Paper: 2021/5/31

Registration:  2021/6/15

Conference:  2021/7/10 – 7/11


Genral issues:

Dr. Wanghui Zou 
Email: zouwh@csust.edu.cn


Website and Submission:

Dr. Li-an Bian
Email: dk061bianlian@126.com


Exhibition & Sponsorship:

Dr. Chuang Bai

Email: 154317586@qq.com

Tel: 15387576800


 Main Sponsor