第九届IEEE下一代电子国际研讨会
第九届IEEE下一代电子国际研讨会
第九届IEEE下一代电子国际研讨会

Xiaoqing Wen

Kyushu Institute of Technology

Japan

 

Mu-Chun Wang

Minghsin University of Science and Technology

Taiwan

 

Xiaozong Huang

CETC

China

 

Mansun Chan

Hong Kong University of Science and Technology

Hong Kong

 

Xing Zhou

Nanyang Technological University

Singapore

 

Kin Leong Pey

Singapore University Technology Design

Singapore

 

Chua-Chin Wang

National Sun Yiet Sun University

Taiwan

 

Kiat Seng Yeo

Nanyang Technological University

Singapore

 

Chao-Sung Lai

Chang Gang University

Taiwan

 

Frank He

Peking University

China

 

Teruo Suzuk

Socionext

Japan

 

Xiuhan Li

Beijing Jiaotong University

China

 

Ibrahim Abdel-Motaleb

Northern Illinois University

USA

Acoustic Shadow Moiré Imaging Technique

Mingxiang Wang

Suzhou University

China

 

T. K. Chiang

National University of Kaohsiung

Taiwan

A New Quasi-3D Subthreshold Current Model Caused by Interface-Trapped-Charge for Quadruple-Gate MOSFET and Its Application for Evaluation of Subthreshold Logic Gate

Wenhui Zhu

Central South University

China

 

Jie Liu

Hunan University

China

 

Minghua Tang

Xiangtan University

China

 

Yong Du

Central South University

China

 

Xiangliang Jin

Hunan Normal University

China

 

Graham Town

Macquarie University

Australia

Wide-bandgap power electronic devices and circuits

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重要日期

论文截稿日期:  2020/4/5

作者通知日期:  2020/5/15

在线注册截止日期:  2020/6/15

会议召开日期:  2020/7/11 – 7/13

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